Realization of a Low Noise Amplifier using 0.35 μm SiGe-BiCMOS Technology for IEEE 802.11a Applications
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چکیده
.................................................................................................... viii Özet ............................................................................................................... ix Chapter
منابع مشابه
A 2.4-GHz LNA: Design, Simulation, and Comparison in 0.2-μm GaAs p-HEMT Process and 0.35-μm SiGe BiCMOS HBT Process
An LNA design and simulation using ED02AH Technology in 0.2-μm GaAs Pseudomorphic HEMT process and 0.35-μm HBT SiGe BiCMOS process are reported as a case of comparison. This work uses an identical circuit topology for both processes which is a 3-volt two stage cascode single-ended topology with a resistive shunt feedback. This LNA is developed for 2.4 GHz ISM band applications. This letter desc...
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تاریخ انتشار 2006